NTE2561 Silicon NPN Transistor Video Amplifier
Features: D High Gain-Bandwidth Product D High Breakdown Voltage D Large Current D Small Reverse Transfer Capacitance Applications: D Wide-Band Amplifiers Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Peak (Pulse) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0A Collector Dissipation, PC TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.75W TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Symbol ICBO IEBO hFE fT Cob Cre VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Test Conditions VCB = 80V, IE = 0 VEB = 2V, IC = 0 VCE = 10V, IC = 50mA VCE = 10V, IC = 100mA VCE = 10V, IC = 100mA VCB = 30V, f = 1MHz VCB = 30V, f = 1MHz IC = 300mA, IB = 30mA IC = 300mA, IB = 30mA IC = 10A, IE = 0 IC = 1mA, RBE = IE = 100A, IC = 0 Min - - 30 20 - - - - - 100 80 3 Typ - - - - 1.2 4.4 3.8 - - - - - Max Unit 0.1 5.0 200 - - - - 0.6 1.2 - - - GHz pF pF V V V V V A A
.420 (10.67) Max
.110 (2.79)
.147 (3.75) Dia Max
.500 (12.7) Max
.250 (6.35) Max .500 (12.7) Min .070 (1.78) Max
Base .100 (2.54)
Emitter Collector/Tab
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